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| FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers June 2006 FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Features High Reverse Voltage : VRRM = 200V Avalanche Energy Rated Planar Construction tm Description The FFB20UP20DN is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Applications Output Rectifiers Switching Mode Power Supply Free-wheeling diode for motor application Power switching circuits Pin Assignments Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM VRWM VR If(avg) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature @ TC = 155oC Ratings 200 200 200 10 100 -55 to +175 Units V V V A A C Thermal Characteristics TC = 25C unless otherwise noted Symbol RJC1 Parameter Maximum Thermal Resistance, Junction to Case Max 3.5 Units C/W Package Marking and Ordering Information Device Marking F20UP20DN Device F20UP20DN Package TO-263 Reel Size 13" 1 Tape Width 24mm Quantity 800 www.fairchildsemi.com (c)2006 Fairchild Semiconductor Corporation FFB20UP20DN Rev. A FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Electrical Characteristics TC = 25C unless otherwise noted Symbol VF 2 Parameter IF = 10A IF = 10A VR = 200V VR = 200V IF =1A, di/dt = 200A/s, VCC = 130V IF =10A, di/dt = 200A/s, VCC = 130V IF =10A, di/dt = 200A/s, VCC = 130V TC = 25 C TC = 150C TC = 25C TC = 150C TC = 25 C TC = 25C TC = 25C TC = 25C TC = 25C Min. 10 Typ. 15 27 21 6 50 - Max 1.15 1.0 10 250 25 40 - Units V V A A ns ns ns ns nC mJ IR 2 trr ta tb Qrr WAVL Avalanche Energy (L = 20mH) Notes 1: Rth_jc value is specified for each die 2: Pulse: Test Pulse width = 300S, Duty Cycle = 2% 2 FFB20UP20DN Rev. A 2 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Typical Characteristics TC = 25C unless otherwise noted 20 Forward Current, IF [A] 100 o 10 Reverse Current, IR [A] TC = 175 C TC = 100 C o 10 1 0.1 0.01 TC = 175 C o 1 TC = 25 C o TC = 100 C o TC = 25 C o 0.1 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1.0 1.2 1E-3 0 50 100 150 Reverse Voltage , VR [V] 200 Figure 1. Typical Forward Voltage Drop 400 Reverse Recovery Time, trr [ns] f = 1MHz Figure 2. Typical Reverse Current 50 45 TC = 175 C o IF = 10A Capacitance, cj [pF] 100 40 35 30 25 20 50 TC = 150 C TC = 25 C o o 10 0.1 1 10 Reverse Voltage , VR [V] 100 100 150 200 di/dt [A/s] 250 300 Figure 3. Typical Junction Capacitance 8 Reverse Recovery Current, Irr [A] IF = 10A TC = 175 C o Figure 4. Typical Reverse Recovery Time Average Recitified Forward Current, IF(AV) [A] 12 10 8 6 4 2 0 120 DC 6 TC = 150 C o 4 TC = 25 C o 2 0 50 100 150 200 di/dt [/s] 250 300 130 140 150 160 Case Temperature, TC (oC) 170 Figure 5. Typical Reverse Recovery Current Figure 6. Case Temperature, Tc [oC] FFB20UP20DN Rev. A 3 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Typical Characteristics TC = 25C unless otherwise noted Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage Figure 9. Maximum Continuous Drain Current vs Ambient Temperature Figure 10. Forward Bias Safe Operating Area Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Transient Thermal Response Curve FFB20UP20DN Rev. A 4 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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